Advanced Silicon-based Materials and Devices Using Chemical Vapor Deposition
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چکیده
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منابع مشابه
Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes.
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p+-Si contact electrode, a suspended Si nano...
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*Correspondence: Qiaoliang Bao, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China e-mail: [email protected], [email protected] The graphene-based transparent and conductive films were demonstrated ...
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